Chen Gui-Bin, Li Zhi-Feng, Cai Wei-Ying, He Li, Hu Xiao-Ning, Lu Wei, Shen Xue-Chu. Study of the current-voltage characteristics of n-on-p junction fabricated by pr oton-implanted molecular beam epitaxial Hg1-xCdxTeJ. Acta Physica Sinica, 2003, 52(6): 1496-1499. DOI: 10.7498/aps.52.1496
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Citation:
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Chen Gui-Bin, Li Zhi-Feng, Cai Wei-Ying, He Li, Hu Xiao-Ning, Lu Wei, Shen Xue-Chu. Study of the current-voltage characteristics of n-on-p junction fabricated by pr oton-implanted molecular beam epitaxial Hg1-xCdxTeJ. Acta Physica Sinica, 2003, 52(6): 1496-1499. DOI: 10.7498/aps.52.1496
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Chen Gui-Bin, Li Zhi-Feng, Cai Wei-Ying, He Li, Hu Xiao-Ning, Lu Wei, Shen Xue-Chu. Study of the current-voltage characteristics of n-on-p junction fabricated by pr oton-implanted molecular beam epitaxial Hg1-xCdxTeJ. Acta Physica Sinica, 2003, 52(6): 1496-1499. DOI: 10.7498/aps.52.1496
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Citation:
|
Chen Gui-Bin, Li Zhi-Feng, Cai Wei-Ying, He Li, Hu Xiao-Ning, Lu Wei, Shen Xue-Chu. Study of the current-voltage characteristics of n-on-p junction fabricated by pr oton-implanted molecular beam epitaxial Hg1-xCdxTeJ. Acta Physica Sinica, 2003, 52(6): 1496-1499. DOI: 10.7498/aps.52.1496
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