Influnce of Al-content on the property of the two-dimensional electron gases in  AlxGa1-xN/GaN heterostructures

Kong Yue-Chan; Zheng You-Dou; Chu Rong-Ming; Gu Shu-Lin

doi:10.7498/aps.52.1756

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Kong Yue-Chan, Zheng You-Dou, Chu Rong-Ming, Gu Shu-Lin. Influnce of Al-content on the property of the two-dimensional electron gases in AlxGa1-xN/GaN heterostructuresJ. Acta Physica Sinica, 2003, 52(7): 1756-1760. DOI: 10.7498/aps.52.1756

Citation:

Kong Yue-Chan, Zheng You-Dou, Chu Rong-Ming, Gu Shu-Lin. Influnce of Al-content on the property of the two-dimensional electron gases in AlxGa1-xN/GaN heterostructuresJ. Acta Physica Sinica, 2003, 52(7): 1756-1760. DOI: 10.7498/aps.52.1756

Citation:

Kong Yue-Chan, Zheng You-Dou, Chu Rong-Ming, Gu Shu-Lin. Influnce of Al-content on the property of the two-dimensional electron gases in AlxGa1-xN/GaN heterostructuresJ. Acta Physica Sinica, 2003, 52(7): 1756-1760. DOI: 10.7498/aps.52.1756