Predicting NMOS device radiation response at different dose rates in γ-ray environment

He Bao-Ping; Wang Gui-Zhen; Zhou Hui; Gong Jian-Cheng; Luo Yin-Hong; Jiang Jing-He

doi:10.7498/aps.52.188

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He Bao-Ping, Wang Gui-Zhen, Zhou Hui, Gong Jian-Cheng, Luo Yin-Hong, Jiang Jing-He. Predicting NMOS device radiation response at different dose rates in γ-ray environmentJ. Acta Physica Sinica, 2003, 52(1): 188-191. DOI: 10.7498/aps.52.188

Citation:

He Bao-Ping, Wang Gui-Zhen, Zhou Hui, Gong Jian-Cheng, Luo Yin-Hong, Jiang Jing-He. Predicting NMOS device radiation response at different dose rates in γ-ray environmentJ. Acta Physica Sinica, 2003, 52(1): 188-191. DOI: 10.7498/aps.52.188

Citation:

He Bao-Ping, Wang Gui-Zhen, Zhou Hui, Gong Jian-Cheng, Luo Yin-Hong, Jiang Jing-He. Predicting NMOS device radiation response at different dose rates in γ-ray environmentJ. Acta Physica Sinica, 2003, 52(1): 188-191. DOI: 10.7498/aps.52.188