A physical-based percolation model for gate oxide TDDB

Ma Zhong-Fa; Zhuang Yi-Qi; Du Lei; Bao Jun-Lin; Li Wei-Hua

doi:10.7498/aps.52.2046

Ma Zhong-Fa, Zhuang Yi-Qi, Du Lei, Bao Jun-Lin, Li Wei-Hua. A physical-based percolation model for gate oxide TDDBJ. Acta Physica Sinica, 2003, 52(8): 2046-2051. DOI: 10.7498/aps.52.2046

Citation:

Ma Zhong-Fa, Zhuang Yi-Qi, Du Lei, Bao Jun-Lin, Li Wei-Hua. A physical-based percolation model for gate oxide TDDBJ. Acta Physica Sinica, 2003, 52(8): 2046-2051. DOI: 10.7498/aps.52.2046

Citation:

Ma Zhong-Fa, Zhuang Yi-Qi, Du Lei, Bao Jun-Lin, Li Wei-Hua. A physical-based percolation model for gate oxide TDDBJ. Acta Physica Sinica, 2003, 52(8): 2046-2051. DOI: 10.7498/aps.52.2046