The simulation study of the tunneling effect in the breakdown  of 4H-SiC pn junc tion diode

Lü Hong-Liang; Zhang Yi-Men; Zhang Yu-Ming

doi:10.7498/aps.52.2541

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Lü Hong-Liang, Zhang Yi-Men, Zhang Yu-Ming. The simulation study of the tunneling effect in the breakdown of 4H-SiC pn junc tion diodeJ. Acta Physica Sinica, 2003, 52(10): 2541-2546. DOI: 10.7498/aps.52.2541

Citation:

Lü Hong-Liang, Zhang Yi-Men, Zhang Yu-Ming. The simulation study of the tunneling effect in the breakdown of 4H-SiC pn junc tion diodeJ. Acta Physica Sinica, 2003, 52(10): 2541-2546. DOI: 10.7498/aps.52.2541

Citation:

Lü Hong-Liang, Zhang Yi-Men, Zhang Yu-Ming. The simulation study of the tunneling effect in the breakdown of 4H-SiC pn junc tion diodeJ. Acta Physica Sinica, 2003, 52(10): 2541-2546. DOI: 10.7498/aps.52.2541