A simulation study of 6H-SiC Schottky barrier source/drain MOSFET

Wang Yuan; Zhang Yi-Men; Zhang Yu-Ming; Tang Xiao-Yan

doi:10.7498/aps.52.2553

Wang Yuan, Zhang Yi-Men, Zhang Yu-Ming, Tang Xiao-Yan. A simulation study of 6H-SiC Schottky barrier source/drain MOSFETJ. Acta Physica Sinica, 2003, 52(10): 2553-2557. DOI: 10.7498/aps.52.2553

Citation:

Wang Yuan, Zhang Yi-Men, Zhang Yu-Ming, Tang Xiao-Yan. A simulation study of 6H-SiC Schottky barrier source/drain MOSFETJ. Acta Physica Sinica, 2003, 52(10): 2553-2557. DOI: 10.7498/aps.52.2553

Citation:

Wang Yuan, Zhang Yi-Men, Zhang Yu-Ming, Tang Xiao-Yan. A simulation study of 6H-SiC Schottky barrier source/drain MOSFETJ. Acta Physica Sinica, 2003, 52(10): 2553-2557. DOI: 10.7498/aps.52.2553