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中国物理学会期刊
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Yang Lin-An, Zhang Yi-Men, Yu Chun-Li, Zhang Yu-Ming. Trapping effect modeling for SiC power MESFETsJ. Acta Physica Sinica, 2003, 52(2): 302-306. DOI: 10.7498/aps.52.302
Citation: Yang Lin-An, Zhang Yi-Men, Yu Chun-Li, Zhang Yu-Ming. Trapping effect modeling for SiC power MESFETsJ. Acta Physica Sinica, 2003, 52(2): 302-306. DOI: 10.7498/aps.52.302
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Trapping effect modeling for SiC power MESFETs

Acta Phys. Sin., 2003, 52(2): 302-306.
DOI: 10.7498/aps.52.302
CSTR: 32037.14.aps.52.302
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