Study of the effect of interface state charges on field-effect mobility of n-channel 6H-SiC MOSFET

Tang Xiao-Yan; Zhang Yi-Men; Zhang Yu-Ming; Gao Jin-Xia

doi:10.7498/aps.52.830

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Tang Xiao-Yan, Zhang Yi-Men, Zhang Yu-Ming, Gao Jin-Xia. Study of the effect of interface state charges on field-effect mobility of n-channel 6H-SiC MOSFETJ. Acta Physica Sinica, 2003, 52(4): 830-833. DOI: 10.7498/aps.52.830

Citation:

Tang Xiao-Yan, Zhang Yi-Men, Zhang Yu-Ming, Gao Jin-Xia. Study of the effect of interface state charges on field-effect mobility of n-channel 6H-SiC MOSFETJ. Acta Physica Sinica, 2003, 52(4): 830-833. DOI: 10.7498/aps.52.830

Citation:

Tang Xiao-Yan, Zhang Yi-Men, Zhang Yu-Ming, Gao Jin-Xia. Study of the effect of interface state charges on field-effect mobility of n-channel 6H-SiC MOSFETJ. Acta Physica Sinica, 2003, 52(4): 830-833. DOI: 10.7498/aps.52.830