Study of 3C-SiC and 4H-SiC films deposited using RF sputtering method

Lin Hong-Feng; Xie Er-Qing; Ma Zi-Wei; Zhang Jun; Peng Ai-Hua; He De-Yan

doi:10.7498/aps.53.2780

Search

x

Lin Hong-Feng, Xie Er-Qing, Ma Zi-Wei, Zhang Jun, Peng Ai-Hua, He De-Yan. Study of 3C-SiC and 4H-SiC films deposited using RF sputtering methodJ. Acta Physica Sinica, 2004, 53(8): 2780-2785. DOI: 10.7498/aps.53.2780

Citation:

Lin Hong-Feng, Xie Er-Qing, Ma Zi-Wei, Zhang Jun, Peng Ai-Hua, He De-Yan. Study of 3C-SiC and 4H-SiC films deposited using RF sputtering methodJ. Acta Physica Sinica, 2004, 53(8): 2780-2785. DOI: 10.7498/aps.53.2780

Citation:

Lin Hong-Feng, Xie Er-Qing, Ma Zi-Wei, Zhang Jun, Peng Ai-Hua, He De-Yan. Study of 3C-SiC and 4H-SiC films deposited using RF sputtering methodJ. Acta Physica Sinica, 2004, 53(8): 2780-2785. DOI: 10.7498/aps.53.2780