Study on the corner effect in new grooved-gate nMOSFET

Tong Jian-Nong; Zou Xue-Cheng; Shen Xu-Bang

doi:10.7498/aps.53.2905

Tong Jian-Nong, Zou Xue-Cheng, Shen Xu-Bang. Study on the corner effect in new grooved-gate nMOSFETJ. Acta Physica Sinica, 2004, 53(9): 2905-2909. DOI: 10.7498/aps.53.2905

Citation:

Tong Jian-Nong, Zou Xue-Cheng, Shen Xu-Bang. Study on the corner effect in new grooved-gate nMOSFETJ. Acta Physica Sinica, 2004, 53(9): 2905-2909. DOI: 10.7498/aps.53.2905

Citation:

Tong Jian-Nong, Zou Xue-Cheng, Shen Xu-Bang. Study on the corner effect in new grooved-gate nMOSFETJ. Acta Physica Sinica, 2004, 53(9): 2905-2909. DOI: 10.7498/aps.53.2905