Influence of Si concentration on the evolution of shape and size of self-assembled Ge islands

Deng Ning; Chen Pei-Yi; Li Zhi-Jian

doi:10.7498/aps.53.3136

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Deng Ning, Chen Pei-Yi, Li Zhi-Jian. Influence of Si concentration on the evolution of shape and size of self-assembled Ge islandsJ. Acta Physica Sinica, 2004, 53(9): 3136-3140. DOI: 10.7498/aps.53.3136

Citation:

Deng Ning, Chen Pei-Yi, Li Zhi-Jian. Influence of Si concentration on the evolution of shape and size of self-assembled Ge islandsJ. Acta Physica Sinica, 2004, 53(9): 3136-3140. DOI: 10.7498/aps.53.3136

Citation:

Deng Ning, Chen Pei-Yi, Li Zhi-Jian. Influence of Si concentration on the evolution of shape and size of self-assembled Ge islandsJ. Acta Physica Sinica, 2004, 53(9): 3136-3140. DOI: 10.7498/aps.53.3136