3UCVD deposition SiO2 on SiC wafer and its C-V measurement

Tang Xiao-Yan; Zhang Yi-Men; Zhang He-Ming; Zhang Yu-Ming; Dai Xian-Ying; Hu Hui-Yong

doi:10.7498/aps.53.3225

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Tang Xiao-Yan, Zhang Yi-Men, Zhang He-Ming, Zhang Yu-Ming, Dai Xian-Ying, Hu Hui-Yong. 3UCVD deposition SiO2 on SiC wafer and its C-V measurementJ. Acta Physica Sinica, 2004, 53(9): 3225-3228. DOI: 10.7498/aps.53.3225

Citation:

Tang Xiao-Yan, Zhang Yi-Men, Zhang He-Ming, Zhang Yu-Ming, Dai Xian-Ying, Hu Hui-Yong. 3UCVD deposition SiO2 on SiC wafer and its C-V measurementJ. Acta Physica Sinica, 2004, 53(9): 3225-3228. DOI: 10.7498/aps.53.3225

Citation:

Tang Xiao-Yan, Zhang Yi-Men, Zhang He-Ming, Zhang Yu-Ming, Dai Xian-Ying, Hu Hui-Yong. 3UCVD deposition SiO2 on SiC wafer and its C-V measurementJ. Acta Physica Sinica, 2004, 53(9): 3225-3228. DOI: 10.7498/aps.53.3225