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中国物理学会期刊
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Lü Yi, Zhang He-Ming, Dai Xian-Ying, Hu Hui-Yong, Shu Bin. Junction capacitance models of SiGe HBTJ. Acta Physica Sinica, 2004, 53(9): 3239-3244. DOI: 10.7498/aps.53.3239
Citation: Lü Yi, Zhang He-Ming, Dai Xian-Ying, Hu Hui-Yong, Shu Bin. Junction capacitance models of SiGe HBTJ. Acta Physica Sinica, 2004, 53(9): 3239-3244. DOI: 10.7498/aps.53.3239
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Junction capacitance models of SiGe HBT

Acta Phys. Sin., 2004, 53(9): 3239-3244.
DOI: 10.7498/aps.53.3239
CSTR: 32037.14.aps.53.3239
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