NcSi/SiO2 multilayer prepared by the method of laser constrained crystallization

Qiao Feng; Huang Xin－Fan; Zhu Da; Ma Zhong－Yuan; Zou HeCheng; Sui Yan－Ping; Li Wei; Zhou Xiao-Hui; Chen Kun－Ji

doi:10.7498/aps.53.4303

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Qiao Feng, Huang Xin－Fan, Zhu Da, Ma Zhong－Yuan, Zou HeCheng, Sui Yan－Ping, Li Wei, Zhou Xiao-Hui, Chen Kun－Ji. NcSi/SiO2 multilayer prepared by the method of laser constrained crystallizationJ. Acta Physica Sinica, 2004, 53(12): 4303-4307. DOI: 10.7498/aps.53.4303

Citation:

Qiao Feng, Huang Xin－Fan, Zhu Da, Ma Zhong－Yuan, Zou HeCheng, Sui Yan－Ping, Li Wei, Zhou Xiao-Hui, Chen Kun－Ji. NcSi/SiO2 multilayer prepared by the method of laser constrained crystallizationJ. Acta Physica Sinica, 2004, 53(12): 4303-4307. DOI: 10.7498/aps.53.4303

Citation:

Qiao Feng, Huang Xin－Fan, Zhu Da, Ma Zhong－Yuan, Zou HeCheng, Sui Yan－Ping, Li Wei, Zhou Xiao-Hui, Chen Kun－Ji. NcSi/SiO2 multilayer prepared by the method of laser constrained crystallizationJ. Acta Physica Sinica, 2004, 53(12): 4303-4307. DOI: 10.7498/aps.53.4303