Boron-doped silicon nanowires grown by plasmaenhanced chemical vapor deposition

Zeng Xiang－Bo; Liao Xian－Bo; Wang Bo; Diao Hong－Wei; Dai Song－Tao; Xiang Xian－Bi; Chang Xiu－Lan; Xu Yan－Yue; Hu Zhi－Hua; Hao Hui－Ying; Kong Guang－Lin

doi:10.7498/aps.53.4410

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Zeng Xiang－Bo, Liao Xian－Bo, Wang Bo, Diao Hong－Wei, Dai Song－Tao, Xiang Xian－Bi, Chang Xiu－Lan, Xu Yan－Yue, Hu Zhi－Hua, Hao Hui－Ying, Kong Guang－Lin. Boron-doped silicon nanowires grown by plasmaenhanced chemical vapor depositionJ. Acta Physica Sinica, 2004, 53(12): 4410-4413. DOI: 10.7498/aps.53.4410

Citation:

Zeng Xiang－Bo, Liao Xian－Bo, Wang Bo, Diao Hong－Wei, Dai Song－Tao, Xiang Xian－Bi, Chang Xiu－Lan, Xu Yan－Yue, Hu Zhi－Hua, Hao Hui－Ying, Kong Guang－Lin. Boron-doped silicon nanowires grown by plasmaenhanced chemical vapor depositionJ. Acta Physica Sinica, 2004, 53(12): 4410-4413. DOI: 10.7498/aps.53.4410

Citation:

Zeng Xiang－Bo, Liao Xian－Bo, Wang Bo, Diao Hong－Wei, Dai Song－Tao, Xiang Xian－Bi, Chang Xiu－Lan, Xu Yan－Yue, Hu Zhi－Hua, Hao Hui－Ying, Kong Guang－Lin. Boron-doped silicon nanowires grown by plasmaenhanced chemical vapor depositionJ. Acta Physica Sinica, 2004, 53(12): 4410-4413. DOI: 10.7498/aps.53.4410