Oxidation-induced stacking faults in nitrogen-doped czochralski silicon investigated by transmission electron microscope

Xu Jin; Yang De-Ren; Chu Jia; Ma Xiang-Yang; Que Duan-Lin

doi:10.7498/aps.53.550

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Xu Jin, Yang De-Ren, Chu Jia, Ma Xiang-Yang, Que Duan-Lin. Oxidation-induced stacking faults in nitrogen-doped czochralski silicon investigated by transmission electron microscopeJ. Acta Physica Sinica, 2004, 53(2): 550-554. DOI: 10.7498/aps.53.550

Citation:

Xu Jin, Yang De-Ren, Chu Jia, Ma Xiang-Yang, Que Duan-Lin. Oxidation-induced stacking faults in nitrogen-doped czochralski silicon investigated by transmission electron microscopeJ. Acta Physica Sinica, 2004, 53(2): 550-554. DOI: 10.7498/aps.53.550

Citation:

Xu Jin, Yang De-Ren, Chu Jia, Ma Xiang-Yang, Que Duan-Lin. Oxidation-induced stacking faults in nitrogen-doped czochralski silicon investigated by transmission electron microscopeJ. Acta Physica Sinica, 2004, 53(2): 550-554. DOI: 10.7498/aps.53.550