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中国物理学会期刊
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Liu Hong Xia, Zheng Xue Feng, Hao Yue. Degradation and physical mechanism of NBT in deep submicron PMOSFET'sJ. Acta Physica Sinica, 2005, 54(3): 1373-1377. DOI: 10.7498/aps.54.1373
Citation: Liu Hong Xia, Zheng Xue Feng, Hao Yue. Degradation and physical mechanism of NBT in deep submicron PMOSFET'sJ. Acta Physica Sinica, 2005, 54(3): 1373-1377. DOI: 10.7498/aps.54.1373
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Degradation and physical mechanism of NBT in deep submicron PMOSFET's

Acta Phys. Sin., 2005, 54(3): 1373-1377.
DOI: 10.7498/aps.54.1373
CSTR: 32037.14.aps.54.1373
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