FTIR study an VO2 defect in fast neutron irradiated Czochralski silicon

Yang Shuai; Li Yang-Xian; Ma Qiao-Yun; Xu Xue-Wen; Niu Ping-Juan; Li Yong-Zhang; Niu Sheng-Li; Li Hong-Tao

doi:10.7498/aps.54.2256

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Yang Shuai, Li Yang-Xian, Ma Qiao-Yun, Xu Xue-Wen, Niu Ping-Juan, Li Yong-Zhang, Niu Sheng-Li, Li Hong-Tao. FTIR study an VO2 defect in fast neutron irradiated Czochralski siliconJ. Acta Physica Sinica, 2005, 54(5): 2256-2260. DOI: 10.7498/aps.54.2256

Citation:

Yang Shuai, Li Yang-Xian, Ma Qiao-Yun, Xu Xue-Wen, Niu Ping-Juan, Li Yong-Zhang, Niu Sheng-Li, Li Hong-Tao. FTIR study an VO2 defect in fast neutron irradiated Czochralski siliconJ. Acta Physica Sinica, 2005, 54(5): 2256-2260. DOI: 10.7498/aps.54.2256

Citation:

Yang Shuai, Li Yang-Xian, Ma Qiao-Yun, Xu Xue-Wen, Niu Ping-Juan, Li Yong-Zhang, Niu Sheng-Li, Li Hong-Tao. FTIR study an VO2 defect in fast neutron irradiated Czochralski siliconJ. Acta Physica Sinica, 2005, 54(5): 2256-2260. DOI: 10.7498/aps.54.2256