Analysis of the mechanism and characteristic for the transparent anode in a gate commutated thyristor

Wang Cai-Lin; Gao Yong; Ma Li; Zhang Chang-Li; Kim Eundong; Kim Sangcheol

doi:10.7498/aps.54.2296

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Wang Cai-Lin, Gao Yong, Ma Li, Zhang Chang-Li, Kim Eundong, Kim Sangcheol. Analysis of the mechanism and characteristic for the transparent anode in a gate commutated thyristorJ. Acta Physica Sinica, 2005, 54(5): 2296-2301. DOI: 10.7498/aps.54.2296

Citation:

Wang Cai-Lin, Gao Yong, Ma Li, Zhang Chang-Li, Kim Eundong, Kim Sangcheol. Analysis of the mechanism and characteristic for the transparent anode in a gate commutated thyristorJ. Acta Physica Sinica, 2005, 54(5): 2296-2301. DOI: 10.7498/aps.54.2296

Citation:

Wang Cai-Lin, Gao Yong, Ma Li, Zhang Chang-Li, Kim Eundong, Kim Sangcheol. Analysis of the mechanism and characteristic for the transparent anode in a gate commutated thyristorJ. Acta Physica Sinica, 2005, 54(5): 2296-2301. DOI: 10.7498/aps.54.2296