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中国物理学会期刊
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Xu Jing-Ping, Li Chun-Xia, Wu Hai-Ping. Analyses on high-temperature electrical properties of 4H-SiC n-MOSFETJ. Acta Physica Sinica, 2005, 54(6): 2918-2923. DOI: 10.7498/aps.54.2918
Citation: Xu Jing-Ping, Li Chun-Xia, Wu Hai-Ping. Analyses on high-temperature electrical properties of 4H-SiC n-MOSFETJ. Acta Physica Sinica, 2005, 54(6): 2918-2923. DOI: 10.7498/aps.54.2918
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Analyses on high-temperature electrical properties of 4H-SiC n-MOSFET

Acta Phys. Sin., 2005, 54(6): 2918-2923.
DOI: 10.7498/aps.54.2918
CSTR: 32037.14.aps.54.2918
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