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中国物理学会期刊
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Liu Hong-Xia, Zheng Xue-Feng, Hao Yue. Generation mechanism of stress induced leakage current in flash memory cellJ. Acta Physica Sinica, 2005, 54(12): 5867-5871. DOI: 10.7498/aps.54.5867
Citation: Liu Hong-Xia, Zheng Xue-Feng, Hao Yue. Generation mechanism of stress induced leakage current in flash memory cellJ. Acta Physica Sinica, 2005, 54(12): 5867-5871. DOI: 10.7498/aps.54.5867
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Generation mechanism of stress induced leakage current in flash memory cell

Acta Phys. Sin., 2005, 54(12): 5867-5871.
DOI: 10.7498/aps.54.5867
CSTR: 32037.14.aps.54.5867
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