Modeling of resistance changes based on the free volume in VLSI interconnection electromigration

Zong Zhao-Xiang; Du Lei; Zhuang Yi-Qi; He Liang; Wu Yong

doi:10.7498/aps.54.5872

Search

x

Zong Zhao-Xiang, Du Lei, Zhuang Yi-Qi, He Liang, Wu Yong. Modeling of resistance changes based on the free volume in VLSI interconnection electromigrationJ. Acta Physica Sinica, 2005, 54(12): 5872-5878. DOI: 10.7498/aps.54.5872

Citation:

Zong Zhao-Xiang, Du Lei, Zhuang Yi-Qi, He Liang, Wu Yong. Modeling of resistance changes based on the free volume in VLSI interconnection electromigrationJ. Acta Physica Sinica, 2005, 54(12): 5872-5878. DOI: 10.7498/aps.54.5872

Citation:

Zong Zhao-Xiang, Du Lei, Zhuang Yi-Qi, He Liang, Wu Yong. Modeling of resistance changes based on the free volume in VLSI interconnection electromigrationJ. Acta Physica Sinica, 2005, 54(12): 5872-5878. DOI: 10.7498/aps.54.5872