Fabrication and properties of the Y-doped Al2O3 high-k gate dielectric films

Guo De-Feng; Geng Wei-Gang; Lan Wei; Huang Chun-Ming; Wang Yin-Yue

doi:10.7498/aps.54.5901

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Guo De-Feng, Geng Wei-Gang, Lan Wei, Huang Chun-Ming, Wang Yin-Yue. Fabrication and properties of the Y-doped Al2O3 high-k gate dielectric filmsJ. Acta Physica Sinica, 2005, 54(12): 5901-5906. DOI: 10.7498/aps.54.5901

Citation:

Guo De-Feng, Geng Wei-Gang, Lan Wei, Huang Chun-Ming, Wang Yin-Yue. Fabrication and properties of the Y-doped Al2O3 high-k gate dielectric filmsJ. Acta Physica Sinica, 2005, 54(12): 5901-5906. DOI: 10.7498/aps.54.5901

Citation:

Guo De-Feng, Geng Wei-Gang, Lan Wei, Huang Chun-Ming, Wang Yin-Yue. Fabrication and properties of the Y-doped Al2O3 high-k gate dielectric filmsJ. Acta Physica Sinica, 2005, 54(12): 5901-5906. DOI: 10.7498/aps.54.5901