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中国物理学会期刊
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Dai Yue-Hua, Chen Jun-Ning, Ke Dao-Ming, Sun Jia-E. An analytical model of MOSFET threshold voltage with considiring the quantum effectsJ. Acta Physica Sinica, 2005, 54(2): 897-901. DOI: 10.7498/aps.54.897
Citation: Dai Yue-Hua, Chen Jun-Ning, Ke Dao-Ming, Sun Jia-E. An analytical model of MOSFET threshold voltage with considiring the quantum effectsJ. Acta Physica Sinica, 2005, 54(2): 897-901. DOI: 10.7498/aps.54.897
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An analytical model of MOSFET threshold voltage with considiring the quantum effects

Acta Phys. Sin., 2005, 54(2): 897-901.
DOI: 10.7498/aps.54.897
CSTR: 32037.14.aps.54.897
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