Growth of p-GaN at low temperature and its properties as light emitting diodes

Liu Nai-Xin; Wang Huai-Bing; Liu Jian-Ping; Niu Nan-Hui; Han Jun; Shen Guang-Di

doi:10.7498/aps.55.1424

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Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Han Jun, Shen Guang-Di. Growth of p-GaN at low temperature and its properties as light emitting diodesJ. Acta Physica Sinica, 2006, 55(3): 1424-1429. DOI: 10.7498/aps.55.1424

Citation:

Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Han Jun, Shen Guang-Di. Growth of p-GaN at low temperature and its properties as light emitting diodesJ. Acta Physica Sinica, 2006, 55(3): 1424-1429. DOI: 10.7498/aps.55.1424

Citation:

Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Han Jun, Shen Guang-Di. Growth of p-GaN at low temperature and its properties as light emitting diodesJ. Acta Physica Sinica, 2006, 55(3): 1424-1429. DOI: 10.7498/aps.55.1424