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中国物理学会期刊
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Wang Hua, Ren Ming-Fang. Memory characteristics of metal-ferroelectric-semiconductor field-effect-transistors with Ag/Bi4Ti3O12/p-Si gateJ. Acta Physica Sinica, 2006, 55(3): 1512-1516. DOI: 10.7498/aps.55.1512
Citation: Wang Hua, Ren Ming-Fang. Memory characteristics of metal-ferroelectric-semiconductor field-effect-transistors with Ag/Bi4Ti3O12/p-Si gateJ. Acta Physica Sinica, 2006, 55(3): 1512-1516. DOI: 10.7498/aps.55.1512
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Memory characteristics of metal-ferroelectric-semiconductor field-effect-transistors with Ag/Bi4Ti3O12/p-Si gate

Acta Phys. Sin., 2006, 55(3): 1512-1516.
DOI: 10.7498/aps.55.1512
CSTR: 32037.14.aps.55.1512
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