Density of defect states in low-k porous SiO2:F film researched by SCLC method

Gou Jie; He Zhi-Wei; Pan Guo-Hui; Wang Yin-Yue

doi:10.7498/aps.55.2936

Gou Jie, He Zhi-Wei, Pan Guo-Hui, Wang Yin-Yue. Density of defect states in low-k porous SiO2:F film researched by SCLC methodJ. Acta Physica Sinica, 2006, 55(6): 2936-2940. DOI: 10.7498/aps.55.2936

Citation:

Gou Jie, He Zhi-Wei, Pan Guo-Hui, Wang Yin-Yue. Density of defect states in low-k porous SiO2:F film researched by SCLC methodJ. Acta Physica Sinica, 2006, 55(6): 2936-2940. DOI: 10.7498/aps.55.2936

Citation:

Gou Jie, He Zhi-Wei, Pan Guo-Hui, Wang Yin-Yue. Density of defect states in low-k porous SiO2:F film researched by SCLC methodJ. Acta Physica Sinica, 2006, 55(6): 2936-2940. DOI: 10.7498/aps.55.2936