Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1－xN and AlN buffer layers grown on Si(111)

Ding Zhi-Bo; Yao Shu-De; Wang Kun; Cheng Kai

doi:10.7498/aps.55.2977

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Ding Zhi-Bo, Yao Shu-De, Wang Kun, Cheng Kai. Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1－xN and AlN buffer layers grown on Si(111)J. Acta Physica Sinica, 2006, 55(6): 2977-2981. DOI: 10.7498/aps.55.2977

Citation:

Ding Zhi-Bo, Yao Shu-De, Wang Kun, Cheng Kai. Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1－xN and AlN buffer layers grown on Si(111)J. Acta Physica Sinica, 2006, 55(6): 2977-2981. DOI: 10.7498/aps.55.2977

Citation:

Ding Zhi-Bo, Yao Shu-De, Wang Kun, Cheng Kai. Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1－xN and AlN buffer layers grown on Si(111)J. Acta Physica Sinica, 2006, 55(6): 2977-2981. DOI: 10.7498/aps.55.2977