Search

x
中国物理学会期刊
Advanced Search
Zhao Yi, Wan Xing-Gong. Substrate and process dependence of gate oxide reliability of 0.18μm dual gate CMOS processJ. Acta Physica Sinica, 2006, 55(6): 3003-3006. DOI: 10.7498/aps.55.3003
Citation: Zhao Yi, Wan Xing-Gong. Substrate and process dependence of gate oxide reliability of 0.18μm dual gate CMOS processJ. Acta Physica Sinica, 2006, 55(6): 3003-3006. DOI: 10.7498/aps.55.3003
shu

Substrate and process dependence of gate oxide reliability of 0.18μm dual gate CMOS process

Acta Phys. Sin., 2006, 55(6): 3003-3006.
DOI: 10.7498/aps.55.3003
CSTR: 32037.14.aps.55.3003
PDF
导出引用

  • Abstract

    Authors and contacts

    References

Turn off MathJax
Article Contents

Catalog

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return