A comparison of ionizing radiation damage in CMOS devices from 60Co Gamma rays, electrons and protons

He Bao-Ping; Chen Wei; Wang Gui-Zhen

doi:10.7498/aps.55.3546

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He Bao-Ping, Chen Wei, Wang Gui-Zhen. A comparison of ionizing radiation damage in CMOS devices from 60Co Gamma rays, electrons and protonsJ. Acta Physica Sinica, 2006, 55(7): 3546-3551. DOI: 10.7498/aps.55.3546

Citation:

He Bao-Ping, Chen Wei, Wang Gui-Zhen. A comparison of ionizing radiation damage in CMOS devices from 60Co Gamma rays, electrons and protonsJ. Acta Physica Sinica, 2006, 55(7): 3546-3551. DOI: 10.7498/aps.55.3546

Citation:

He Bao-Ping, Chen Wei, Wang Gui-Zhen. A comparison of ionizing radiation damage in CMOS devices from 60Co Gamma rays, electrons and protonsJ. Acta Physica Sinica, 2006, 55(7): 3546-3551. DOI: 10.7498/aps.55.3546