A new small signal physical model of InP-based composite channel high electron mobility transistor

Li Xiao; Liu Liang; Zhang Hai-Ying; Yin Jun-Jian; Li Hai-Ou; Ye Tian-Chun; Gong Min

doi:10.7498/aps.55.3617

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Li Xiao, Liu Liang, Zhang Hai-Ying, Yin Jun-Jian, Li Hai-Ou, Ye Tian-Chun, Gong Min. A new small signal physical model of InP-based composite channel high electron mobility transistorJ. Acta Physica Sinica, 2006, 55(7): 3617-3621. DOI: 10.7498/aps.55.3617

Citation:

Li Xiao, Liu Liang, Zhang Hai-Ying, Yin Jun-Jian, Li Hai-Ou, Ye Tian-Chun, Gong Min. A new small signal physical model of InP-based composite channel high electron mobility transistorJ. Acta Physica Sinica, 2006, 55(7): 3617-3621. DOI: 10.7498/aps.55.3617

Citation:

Li Xiao, Liu Liang, Zhang Hai-Ying, Yin Jun-Jian, Li Hai-Ou, Ye Tian-Chun, Gong Min. A new small signal physical model of InP-based composite channel high electron mobility transistorJ. Acta Physica Sinica, 2006, 55(7): 3617-3621. DOI: 10.7498/aps.55.3617