Current slump mechanism and its physical model of AlGaN/GaN HEMTs under DC bias

Hao Yue; Han Xin-Wei; Zhang Jin-Cheng; Zhang Jin-Feng

doi:10.7498/aps.55.3622

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Hao Yue, Han Xin-Wei, Zhang Jin-Cheng, Zhang Jin-Feng. Current slump mechanism and its physical model of AlGaN/GaN HEMTs under DC biasJ. Acta Physica Sinica, 2006, 55(7): 3622-3628. DOI: 10.7498/aps.55.3622

Citation:

Hao Yue, Han Xin-Wei, Zhang Jin-Cheng, Zhang Jin-Feng. Current slump mechanism and its physical model of AlGaN/GaN HEMTs under DC biasJ. Acta Physica Sinica, 2006, 55(7): 3622-3628. DOI: 10.7498/aps.55.3622

Citation:

Hao Yue, Han Xin-Wei, Zhang Jin-Cheng, Zhang Jin-Feng. Current slump mechanism and its physical model of AlGaN/GaN HEMTs under DC biasJ. Acta Physica Sinica, 2006, 55(7): 3622-3628. DOI: 10.7498/aps.55.3622