2-D threshold voltage model for short-channel MOSFET with quantum-mechanical effects

Li Yan-Ping; Xu Jing-Ping; Chen Wei-Bing; Xu Sheng-Guo; Ji Feng

doi:10.7498/aps.55.3670

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Li Yan-Ping, Xu Jing-Ping, Chen Wei-Bing, Xu Sheng-Guo, Ji Feng. 2-D threshold voltage model for short-channel MOSFET with quantum-mechanical effectsJ. Acta Physica Sinica, 2006, 55(7): 3670-3676. DOI: 10.7498/aps.55.3670

Citation:

Li Yan-Ping, Xu Jing-Ping, Chen Wei-Bing, Xu Sheng-Guo, Ji Feng. 2-D threshold voltage model for short-channel MOSFET with quantum-mechanical effectsJ. Acta Physica Sinica, 2006, 55(7): 3670-3676. DOI: 10.7498/aps.55.3670

Citation:

Li Yan-Ping, Xu Jing-Ping, Chen Wei-Bing, Xu Sheng-Guo, Ji Feng. 2-D threshold voltage model for short-channel MOSFET with quantum-mechanical effectsJ. Acta Physica Sinica, 2006, 55(7): 3670-3676. DOI: 10.7498/aps.55.3670