Li Dong-Lin, Zeng Yi-Ping. Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistorsJ. Acta Physica Sinica, 2006, 55(7): 3677-3682. DOI: 10.7498/aps.55.3677
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Citation:
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Li Dong-Lin, Zeng Yi-Ping. Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistorsJ. Acta Physica Sinica, 2006, 55(7): 3677-3682. DOI: 10.7498/aps.55.3677
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Li Dong-Lin, Zeng Yi-Ping. Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistorsJ. Acta Physica Sinica, 2006, 55(7): 3677-3682. DOI: 10.7498/aps.55.3677
|
Citation:
|
Li Dong-Lin, Zeng Yi-Ping. Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistorsJ. Acta Physica Sinica, 2006, 55(7): 3677-3682. DOI: 10.7498/aps.55.3677
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