Poly-SiGe films prepared by metal-induced growth using UHVCVD system

Wu Gui-Bin; Ye Zhi-Zhen; Zhao Xing; Liu Guo-Jun; Zhao Bin-Hui

doi:10.7498/aps.55.3756

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Wu Gui-Bin, Ye Zhi-Zhen, Zhao Xing, Liu Guo-Jun, Zhao Bin-Hui. Poly-SiGe films prepared by metal-induced growth using UHVCVD systemJ. Acta Physica Sinica, 2006, 55(7): 3756-3759. DOI: 10.7498/aps.55.3756

Citation:

Wu Gui-Bin, Ye Zhi-Zhen, Zhao Xing, Liu Guo-Jun, Zhao Bin-Hui. Poly-SiGe films prepared by metal-induced growth using UHVCVD systemJ. Acta Physica Sinica, 2006, 55(7): 3756-3759. DOI: 10.7498/aps.55.3756

Citation:

Wu Gui-Bin, Ye Zhi-Zhen, Zhao Xing, Liu Guo-Jun, Zhao Bin-Hui. Poly-SiGe films prepared by metal-induced growth using UHVCVD systemJ. Acta Physica Sinica, 2006, 55(7): 3756-3759. DOI: 10.7498/aps.55.3756