Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam

Chen Zhi-Quan; Kawasuso Atsuo

doi:10.7498/aps.55.4353

Chen Zhi-Quan, Kawasuso Atsuo. Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beamJ. Acta Physica Sinica, 2006, 55(8): 4353-4357. DOI: 10.7498/aps.55.4353

Citation:

Chen Zhi-Quan, Kawasuso Atsuo. Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beamJ. Acta Physica Sinica, 2006, 55(8): 4353-4357. DOI: 10.7498/aps.55.4353

Citation:

Chen Zhi-Quan, Kawasuso Atsuo. Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beamJ. Acta Physica Sinica, 2006, 55(8): 4353-4357. DOI: 10.7498/aps.55.4353