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中国物理学会期刊
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Dai Yue-Hua, Chen Jun-Ning, Ke Dao-Ming, Sun Jia-E, Hu Yuan. An analytical model of mobility in nano-scaled n-MOSFETsJ. Acta Physica Sinica, 2006, 55(11): 6090-6094. DOI: 10.7498/aps.55.6090
Citation: Dai Yue-Hua, Chen Jun-Ning, Ke Dao-Ming, Sun Jia-E, Hu Yuan. An analytical model of mobility in nano-scaled n-MOSFETsJ. Acta Physica Sinica, 2006, 55(11): 6090-6094. DOI: 10.7498/aps.55.6090
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An analytical model of mobility in nano-scaled n-MOSFETs

Acta Phys. Sin., 2006, 55(11): 6090-6094.
DOI: 10.7498/aps.55.6090
CSTR: 32037.14.aps.55.6090
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