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中国物理学会期刊
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Li Zhong-He, Liu Hong-Xia, Hao Yue. Mechanism of NBTI degradation in ultra deep submicron PMOSFET’sJ. Acta Physica Sinica, 2006, 55(2): 820-824. DOI: 10.7498/aps.55.820
Citation: Li Zhong-He, Liu Hong-Xia, Hao Yue. Mechanism of NBTI degradation in ultra deep submicron PMOSFET’sJ. Acta Physica Sinica, 2006, 55(2): 820-824. DOI: 10.7498/aps.55.820
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Mechanism of NBTI degradation in ultra deep submicron PMOSFET’s

Acta Phys. Sin., 2006, 55(2): 820-824.
DOI: 10.7498/aps.55.820
CSTR: 32037.14.aps.55.820
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