Electronic and magnetic properties of 3d transition-metal-doped Ⅲ-Ⅴ semiconductors：first-principle calculations

Lin Qiu-Bao; Li Ren-Quan; Zeng Yong-Zhi; Zhu Zi-Zhong

doi:10.7498/aps.55.873

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Lin Qiu-Bao, Li Ren-Quan, Zeng Yong-Zhi, Zhu Zi-Zhong. Electronic and magnetic properties of 3d transition-metal-doped Ⅲ-Ⅴ semiconductors：first-principle calculationsJ. Acta Physica Sinica, 2006, 55(2): 873-878. DOI: 10.7498/aps.55.873

Citation:

Lin Qiu-Bao, Li Ren-Quan, Zeng Yong-Zhi, Zhu Zi-Zhong. Electronic and magnetic properties of 3d transition-metal-doped Ⅲ-Ⅴ semiconductors：first-principle calculationsJ. Acta Physica Sinica, 2006, 55(2): 873-878. DOI: 10.7498/aps.55.873

Citation:

Lin Qiu-Bao, Li Ren-Quan, Zeng Yong-Zhi, Zhu Zi-Zhong. Electronic and magnetic properties of 3d transition-metal-doped Ⅲ-Ⅴ semiconductors：first-principle calculationsJ. Acta Physica Sinica, 2006, 55(2): 873-878. DOI: 10.7498/aps.55.873