Characteristics of degradation under GIDL stress in ultrathin gate oxide LDD nMOSFET’s

Chen Hai-Feng; Hao Yue; Ma Xiao-Hua; Tang Yu; Meng Zhi-Qin; Cao Yan-Rong; Zhou Peng-Ju

doi:10.7498/aps.56.1662

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Chen Hai-Feng, Hao Yue, Ma Xiao-Hua, Tang Yu, Meng Zhi-Qin, Cao Yan-Rong, Zhou Peng-Ju. Characteristics of degradation under GIDL stress in ultrathin gate oxide LDD nMOSFET’sJ. Acta Physica Sinica, 2007, 56(3): 1662-1667. DOI: 10.7498/aps.56.1662

Citation:

Chen Hai-Feng, Hao Yue, Ma Xiao-Hua, Tang Yu, Meng Zhi-Qin, Cao Yan-Rong, Zhou Peng-Ju. Characteristics of degradation under GIDL stress in ultrathin gate oxide LDD nMOSFET’sJ. Acta Physica Sinica, 2007, 56(3): 1662-1667. DOI: 10.7498/aps.56.1662

Citation:

Chen Hai-Feng, Hao Yue, Ma Xiao-Hua, Tang Yu, Meng Zhi-Qin, Cao Yan-Rong, Zhou Peng-Ju. Characteristics of degradation under GIDL stress in ultrathin gate oxide LDD nMOSFET’sJ. Acta Physica Sinica, 2007, 56(3): 1662-1667. DOI: 10.7498/aps.56.1662