Guo Qun-Chao, Geng Xin-Hua, Sun Jian Wei, Chang-Chun, Han Xiao-Yan, Zhang Xiao_Dan, Zhao Ying. Role of gas residence time in the deposition rate and properties of microcrystalline silicon filmsJ. Acta Physica Sinica, 2007, 56(5): 2790-2795. DOI: 10.7498/aps.56.2790
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Citation:
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Guo Qun-Chao, Geng Xin-Hua, Sun Jian Wei, Chang-Chun, Han Xiao-Yan, Zhang Xiao_Dan, Zhao Ying. Role of gas residence time in the deposition rate and properties of microcrystalline silicon filmsJ. Acta Physica Sinica, 2007, 56(5): 2790-2795. DOI: 10.7498/aps.56.2790
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Guo Qun-Chao, Geng Xin-Hua, Sun Jian Wei, Chang-Chun, Han Xiao-Yan, Zhang Xiao_Dan, Zhao Ying. Role of gas residence time in the deposition rate and properties of microcrystalline silicon filmsJ. Acta Physica Sinica, 2007, 56(5): 2790-2795. DOI: 10.7498/aps.56.2790
|
Citation:
|
Guo Qun-Chao, Geng Xin-Hua, Sun Jian Wei, Chang-Chun, Han Xiao-Yan, Zhang Xiao_Dan, Zhao Ying. Role of gas residence time in the deposition rate and properties of microcrystalline silicon filmsJ. Acta Physica Sinica, 2007, 56(5): 2790-2795. DOI: 10.7498/aps.56.2790
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