Determination of  chemical composition and average crystal lattice constants of InGaN/GaN multiple quantum wells

Ding Zhi-Bo; Wang Qi; Wang Kun; Wang Huan; Chen Tian-Xiang; Zhang Guo-Yi; Yao Shu-De

doi:10.7498/aps.56.2873

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Ding Zhi-Bo, Wang Qi, Wang Kun, Wang Huan, Chen Tian-Xiang, Zhang Guo-Yi, Yao Shu-De. Determination of chemical composition and average crystal lattice constants of InGaN/GaN multiple quantum wellsJ. Acta Physica Sinica, 2007, 56(5): 2873-2877. DOI: 10.7498/aps.56.2873

Citation:

Ding Zhi-Bo, Wang Qi, Wang Kun, Wang Huan, Chen Tian-Xiang, Zhang Guo-Yi, Yao Shu-De. Determination of chemical composition and average crystal lattice constants of InGaN/GaN multiple quantum wellsJ. Acta Physica Sinica, 2007, 56(5): 2873-2877. DOI: 10.7498/aps.56.2873

Citation:

Ding Zhi-Bo, Wang Qi, Wang Kun, Wang Huan, Chen Tian-Xiang, Zhang Guo-Yi, Yao Shu-De. Determination of chemical composition and average crystal lattice constants of InGaN/GaN multiple quantum wellsJ. Acta Physica Sinica, 2007, 56(5): 2873-2877. DOI: 10.7498/aps.56.2873