Relation between breakdown voltage and current collapse in GaN FP-HEMTs

Guo Liang-Liang; Feng Qian; Ma Xiang-Bai; Hao Yue; Liu Jie

doi:10.7498/aps.56.2900

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Guo Liang-Liang, Feng Qian, Ma Xiang-Bai, Hao Yue, Liu Jie. Relation between breakdown voltage and current collapse in GaN FP-HEMTsJ. Acta Physica Sinica, 2007, 56(5): 2900-2904. DOI: 10.7498/aps.56.2900

Citation:

Guo Liang-Liang, Feng Qian, Ma Xiang-Bai, Hao Yue, Liu Jie. Relation between breakdown voltage and current collapse in GaN FP-HEMTsJ. Acta Physica Sinica, 2007, 56(5): 2900-2904. DOI: 10.7498/aps.56.2900

Citation:

Guo Liang-Liang, Feng Qian, Ma Xiang-Bai, Hao Yue, Liu Jie. Relation between breakdown voltage and current collapse in GaN FP-HEMTsJ. Acta Physica Sinica, 2007, 56(5): 2900-2904. DOI: 10.7498/aps.56.2900