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中国物理学会期刊
Enhanced luminescence of InGaN/GaN multiple quantum wells with indium doped GaN barriersJ. Acta Physica Sinica, 2007, 56(12): 7295-7299. DOI: 10.7498/aps.56.7295
Citation: Enhanced luminescence of InGaN/GaN multiple quantum wells with indium doped GaN barriersJ. Acta Physica Sinica, 2007, 56(12): 7295-7299. DOI: 10.7498/aps.56.7295

Enhanced luminescence of InGaN/GaN multiple quantum wells with indium doped GaN barriers

CSTR: 32037.14.aps.56.7295
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