Compensating impurity in high purity silicon single crystal investigated by photo-thermal ionization spectroscopy

Yu Chen-Hui; Zhang Bo; Yu Li-Bo; Li Ya-Jun; Lu Wei; Shen Xue-Chu

doi:10.7498/aps.57.1102

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Yu Chen-Hui, Zhang Bo, Yu Li-Bo, Li Ya-Jun, Lu Wei, Shen Xue-Chu. Compensating impurity in high purity silicon single crystal investigated by photo-thermal ionization spectroscopyJ. Acta Physica Sinica, 2008, 57(2): 1102-1108. DOI: 10.7498/aps.57.1102

Citation:

Yu Chen-Hui, Zhang Bo, Yu Li-Bo, Li Ya-Jun, Lu Wei, Shen Xue-Chu. Compensating impurity in high purity silicon single crystal investigated by photo-thermal ionization spectroscopyJ. Acta Physica Sinica, 2008, 57(2): 1102-1108. DOI: 10.7498/aps.57.1102

Citation:

Yu Chen-Hui, Zhang Bo, Yu Li-Bo, Li Ya-Jun, Lu Wei, Shen Xue-Chu. Compensating impurity in high purity silicon single crystal investigated by photo-thermal ionization spectroscopyJ. Acta Physica Sinica, 2008, 57(2): 1102-1108. DOI: 10.7498/aps.57.1102