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中国物理学会期刊
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Lü Ling, Gong Xin, Hao Yue. Properties of p-type GaN etched by inductively coupled plasma and their improvementJ. Acta Physica Sinica, 2008, 57(2): 1128-1132. DOI: 10.7498/aps.57.1128
Citation: Lü Ling, Gong Xin, Hao Yue. Properties of p-type GaN etched by inductively coupled plasma and their improvementJ. Acta Physica Sinica, 2008, 57(2): 1128-1132. DOI: 10.7498/aps.57.1128
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Properties of p-type GaN etched by inductively coupled plasma and their improvement

Acta Phys. Sin., 2008, 57(2): 1128-1132.
DOI: 10.7498/aps.57.1128
CSTR: 32037.14.aps.57.1128
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