Dependence of properties of GaN-based light emitting diodes on the surface InGaN thickness

Gu Xiao-Ling; Guo Xia; Wu Di; Li Yi-Bo; Shen Guang-Di

doi:10.7498/aps.57.1220

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Gu Xiao-Ling, Guo Xia, Wu Di, Li Yi-Bo, Shen Guang-Di. Dependence of properties of GaN-based light emitting diodes on the surface InGaN thicknessJ. Acta Physica Sinica, 2008, 57(2): 1220-1223. DOI: 10.7498/aps.57.1220

Citation:

Gu Xiao-Ling, Guo Xia, Wu Di, Li Yi-Bo, Shen Guang-Di. Dependence of properties of GaN-based light emitting diodes on the surface InGaN thicknessJ. Acta Physica Sinica, 2008, 57(2): 1220-1223. DOI: 10.7498/aps.57.1220

Citation:

Gu Xiao-Ling, Guo Xia, Wu Di, Li Yi-Bo, Shen Guang-Di. Dependence of properties of GaN-based light emitting diodes on the surface InGaN thicknessJ. Acta Physica Sinica, 2008, 57(2): 1220-1223. DOI: 10.7498/aps.57.1220