The extraction method for trap parameters in 4H-SiC MESFETs

Lü Hong-Liang; Zhang Yi-Men; Zhang Yu-Ming; Che Yong; Wang Yue-Hu; Chen Liang

doi:10.7498/aps.57.2871

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Lü Hong-Liang, Zhang Yi-Men, Zhang Yu-Ming, Che Yong, Wang Yue-Hu, Chen Liang. The extraction method for trap parameters in 4H-SiC MESFETsJ. Acta Physica Sinica, 2008, 57(5): 2871-2874. DOI: 10.7498/aps.57.2871

Citation:

Lü Hong-Liang, Zhang Yi-Men, Zhang Yu-Ming, Che Yong, Wang Yue-Hu, Chen Liang. The extraction method for trap parameters in 4H-SiC MESFETsJ. Acta Physica Sinica, 2008, 57(5): 2871-2874. DOI: 10.7498/aps.57.2871

Citation:

Lü Hong-Liang, Zhang Yi-Men, Zhang Yu-Ming, Che Yong, Wang Yue-Hu, Chen Liang. The extraction method for trap parameters in 4H-SiC MESFETsJ. Acta Physica Sinica, 2008, 57(5): 2871-2874. DOI: 10.7498/aps.57.2871