Change in stress  of GaN light-emitting diode films during the process of transferring the film from the Si(111) growth substrate to new substrate

Xiong Chuan-Bing; Jiang Feng-Yi; Fang Wen-Qing; Wang Li; Mo Chun-Lan

doi:10.7498/aps.57.3176

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Xiong Chuan-Bing, Jiang Feng-Yi, Fang Wen-Qing, Wang Li, Mo Chun-Lan. Change in stress of GaN light-emitting diode films during the process of transferring the film from the Si(111) growth substrate to new substrateJ. Acta Physica Sinica, 2008, 57(5): 3176-3181. DOI: 10.7498/aps.57.3176

Citation:

Xiong Chuan-Bing, Jiang Feng-Yi, Fang Wen-Qing, Wang Li, Mo Chun-Lan. Change in stress of GaN light-emitting diode films during the process of transferring the film from the Si(111) growth substrate to new substrateJ. Acta Physica Sinica, 2008, 57(5): 3176-3181. DOI: 10.7498/aps.57.3176

Citation:

Xiong Chuan-Bing, Jiang Feng-Yi, Fang Wen-Qing, Wang Li, Mo Chun-Lan. Change in stress of GaN light-emitting diode films during the process of transferring the film from the Si(111) growth substrate to new substrateJ. Acta Physica Sinica, 2008, 57(5): 3176-3181. DOI: 10.7498/aps.57.3176