2-D analytical modeling of dual material gate fully depleted SOI MOSFET with high-k dielectric

Luan Su-Zhen; Liu Hong-Xia; Jia Ren-Xu; Cai Nai-Qiong

doi:10.7498/aps.57.3807

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Luan Su-Zhen, Liu Hong-Xia, Jia Ren-Xu, Cai Nai-Qiong. 2-D analytical modeling of dual material gate fully depleted SOI MOSFET with high-k dielectricJ. Acta Physica Sinica, 2008, 57(6): 3807-3812. DOI: 10.7498/aps.57.3807

Citation:

Luan Su-Zhen, Liu Hong-Xia, Jia Ren-Xu, Cai Nai-Qiong. 2-D analytical modeling of dual material gate fully depleted SOI MOSFET with high-k dielectricJ. Acta Physica Sinica, 2008, 57(6): 3807-3812. DOI: 10.7498/aps.57.3807

Citation:

Luan Su-Zhen, Liu Hong-Xia, Jia Ren-Xu, Cai Nai-Qiong. 2-D analytical modeling of dual material gate fully depleted SOI MOSFET with high-k dielectricJ. Acta Physica Sinica, 2008, 57(6): 3807-3812. DOI: 10.7498/aps.57.3807